| 학회 |
한국고분자학회 |
| 학술대회 |
2014년 봄 (04/10 ~ 04/11, 대전 컨벤션센터) |
| 권호 |
39권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Atomically-thin Molecular Doping Layer for CVD Graphene Using Modified Graphene Oxide |
| 초록 |
Here, we demonstrate for the first time a highly expendable doping of large area graphene by using chemically versatile monolayer graphene oxide (GO) nanosheets. The charge transfer interaction between graphene and the electron-withdrawing groups of GO nanosheets showed efficient transition of the electronic states of the graphene, revealing the feasibility of the GO as a new dopant material. Moreover, GO doping method is also beneficial for maintaining the intrinsic roughness and transparency of graphene, which is unique characteristics of the atomically thin GO. The doping level of graphene was finely tuned by simple variation of the coverage, the degree of oxidation and reduction of GO. Furthermore, we also demonstrated organic thin film transistors (OTFTs) with graphene/GO as electrodes which showed excellent electrical performance. The GO doping method will also be very useful for optoelectronics such as organic solar cells and organic light-emitting diodes as well as OTFTs. |
| 저자 |
김해나1, 김현호1, 장정인2, 이성규1, 이건웅2, 한중탁2, 조길원1
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| 소속 |
1포항공과대, 2한국전기(연) |
| 키워드 |
graphene; controllable doping; graphene oxide; OFET
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| E-Mail |
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