| 학회 |
한국재료학회 |
| 학술대회 |
2008년 봄 (05/22 ~ 05/23, 상록리조트) |
| 권호 |
14권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
The effect of growth temperature on InAs/GaAs quantum dots grown by Molecular Beam Epitaxy |
| 초록 |
In this work, InAs self assembled QDs were grown by molecular beam epitaxy (MBE) on GaAs substrate in various growth temperature. The structural and optical properties were investigated by Atomic Force Microscopy (AFM) and photoluminescence (PL). The formation process of InAs QDs was investigated by using reflection high-energy electron diffraction (RHEED). It is found that the size of quantum dots is increased by relatively high growth temperature. PL showed significant variation with the growth conditions and red shift. |
| 저자 |
J. H. Jang1, S. J. Hwangboe2, D. H. Kim3, J.Y. Leem1, M.H. Jeon2
|
| 소속 |
1Department of Nano System Engineering, 2Center for Nano Manufacturing, 3Inje Univ. |
| 키워드 |
MBE; growth temperature; InAs
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| E-Mail |
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