| 학회 | 한국재료학회 |
| 학술대회 | 2013년 가을 (11/06 ~ 11/08, 제주롯데호텔) |
| 권호 | 19권 2호 |
| 발표분야 | C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 | Effect of sulfurization temperature on the Mo(Sx,Se1-x)2 interfacial and other properties on the Cu2ZnSn(Sx,Se1-x)4 |
| 초록 | ABSTRACT Cu2ZnSnS4 (CZTS) thin films were synthesized by sulfurization of evaporated deposited Cu-Zn-Sn-Se precursor thin films. The sulfurization was carried out graphite box with S power. Effect of sulfurization temperature on the MoSSe interfacial and other properties on the CZTSSe were investgated. From Field emission scanning electron microscopy and transmission electron microscopy results, the MoS2 interfacial layer for the sulfurized CZTS thin films were observed over 500 °C and its thickness increased with increasing sulfurization temperatures. In addition, the Cu-out diffusion behavior in the MoSSe layer was observed at 580 °C. Further the detailed analysis and discussion of MoSSe thin layer such as atomic alignment, defects, and interface of the CZTS/MoS2/Mo structured thin films will be discussed. |
| 저자 | Yeong Yung Yoo1, Chang woo Hong2, Seung Wook Shin2, Jang Ha Jun3, Young Baek Kim4, Kwang Young Kim5, Jeong Yong Lee6, Jong-Ha Moon5, Jin Hyoek Kim6 |
| 소속 | 1National Center for Nanoprocess and Equipments KITECH, 2Chonnam National Univ., 3Department of Materials Science and Engineering, 4KAIST, 5National Center for Nanoprocess and Equipments, 6KITECH |
| 키워드 | CZTSSe; sulfurization; evaporization kesterite; Effect sulfurization temperature |
