학회 |
한국고분자학회 |
학술대회 |
2018년 봄 (04/04 ~ 04/06, 대전컨벤션센터) |
권호 |
43권 1호 |
발표분야 |
기능성 고분자 |
제목 |
Effect of purge-time of the Atomic Layer Deposition process to the moisture barrier properties of Aluminum oxide thin films. |
초록 |
We reported thin-film encapsulations based on Al2O3/V4D4-CHMA grown by atomic layer deposition (ALD) and initiated chemical vapor deposition (iCVD) alternatively. ALD is well-known with high conformality and precise thickness control for ultrathin film depositing, however time-consuming is a major limit of ALD process. Besides that, moisture barrier ability is the prime determinant of encapsulations’ performance. In this study, we aimed to optimize the purge-time parameter of ALD process for the high barrier performance. The effects of the purge time on growth rate and barrier properties of Al2O3 thin films with varying the purge-time of precursors – trimethylaluminum (TMA) and ozone (O3) were investigated via SEM, AFM, WVTR test. |
저자 |
Thu Nguyen1, 김성희2, 이준영2
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소속 |
1Sungkyunkwan Univ., 2성균관대 |
키워드 |
ALD; Aluminium Oxide; Barrier Film
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E-Mail |
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