| 학회 |
한국고분자학회 |
| 학술대회 |
2019년 봄 (04/10 ~ 04/12, 부산컨벤션센터(BEXCO)) |
| 권호 |
44권 1호 |
| 발표분야 |
대학원생 구두발표 (영어발표, 발표15분) |
| 제목 |
Interpretation of Line Edge Roughness in Extreme-Ultraviolet (EUV) Lithography using Molecular Simulations |
| 초록 |
One of crucial challenges for achieving sub-1x nm patterning via extreme-ultraviolet (EUV) lithography is reducing the roughness at the edge of patterns while maintaining high resolution and sensitivity. Previous studies have focused on photochemistry and pointed out photon shot noise and acid diffusion as main reasons of line edge roughness (LER). However, as target size of patterns becomes smaller, desired LER is compatible to the molecular size of polymer chains and continuum approaches fail to capture physical phenomena associated with molecular conformations and their dynamics. We propose a new EUV photoresist simulation model which includes explicit description of polymer chains and its variation during EUV lithography process. With our new model effects of polymer chain conformation on LER are investigated under various process conditions. |
| 저자 |
박주혜1, 이성규2, Yannick Vesters3, 김명웅4, Danilo De Simone3, 오혜근2, 허수미1
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| 소속 |
1전남대, 2한양대, 3IMEC, 4인하대 |
| 키워드 |
EUV (extreme ultra violet) resist; interfacial roughness; molecular simulation
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| E-Mail |
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