| 학회 | 한국재료학회 |
| 학술대회 | 2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 | 26권 1호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Contact engineering and performance improvement of TMD and IGZO FETs |
| 초록 | The semiconductor industry has been developed with a stimulus of the device dimension scaling last decades. However, significant miniaturization of device has resulted in limitations such as short channel effect. To this end, new materials that has excellent characteristics have been explored. Indium Zinc Gallium Oxide (IGZO) has been attracted intense attentions due to low cost, large-area processibility and high field effect mobility. 2-dimensional transition metal dichalcogenides (TMDs) is also a promising materials with good performances. These materials have been stuided for electronic devices such as field effect transistors, optical devices, and sensors due to various advantages. However, several limitations have still to be addressed to meet the industrial criteria. Among the limitations, large contact resistance is a serious problem since nano-material transistors are Schottky-barrier type transistors. To reduce contact resistance, there are three main medhods; changing contact metal, channel doping, and Fermi-level de-pinning layer. Especially, Fermi-level de-pinning layer has not yet been explored for nano-material transistors. Here, ultra-thin insulating Fermi-level de-pinning layer is studied for TMD and IGZO transistors to reduce contact resistance and achieve stable device performance. Two insulating layers, Al2O3 and TiO2, were chosen, considering band-offset with the contact metal and semiconductor. We achieved improved device performance; increased drain current, reduced contact resistance, and stable operatio. |
| 저자 | 박우진, 오세영, 권오준, 조병진 |
| 소속 | 충북대 |
| 키워드 | <P>contact resistance; TMD; IGZO; transistor</P> |
