| 초록 |
Currently, plasma etch-induced damage for sub 10nm device leads to degradation of device performance by increasing sheet resistance due to altered doping levels. To address this issue, a great deal of attention has been attracted to the atomic layer etching (ALE) process as the design rule of next generation device in semiconductor industry decreases up to sub-10 nm. It is well known that this process is a technique for removing few monolayer of material using sequential reactions steps that are self-limiting, leading to the atomic scale etching process. Recently, cyclic fluorocarbon ALE process using conventional plasma etching system has attracted much attention due to its inherent advantage. In this work, we developed this realistic surface reaction model for cyclic fluorocarbon ALE process. Finally, the surface reaction model was coupled with 3D topography simulation for this ALE process to investigate the feasibility for applications of various 3D nano-device structures. We believe that this work can lead to better understanding of the ALE processing simulation toward wide applications in next generation sub-10 nm device. |
