| 학회 |
한국재료학회 |
| 학술대회 |
2012년 가을 (11/07 ~ 11/09, 라카이샌드파인 리조트) |
| 권호 |
18권 2호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
Characteristics of p- and n-type SnO thin films fabricated by reactive sputtering |
| 초록 |
SnO thin films were fabricated via reactive rf magnetron sputtering on glass substrates with an Sn target and Ar/O2 gas mixture. The n-type to p-type conductivity inversion of SnO thin films was demonstrated by increasing rf power. The electrical conductivity of SnO thin films showed a relatively low p-type conductivity of 0.05 (ohm-cm)−1 due to a low mobility. Consequently, it showed very poor p-channel characteristics. SnO thin films consisted of a short-range ordered cryatalline phase and the degree of crystallinity was improved as rf power increased. Lastly, SnO thin films had poor optical transmittance in the visible range at a higher rf power. |
| 저자 |
엄요셉, 노병민, 김사라은경
|
| 소속 |
서울과학기술대 |
| 키워드 |
Tin Oxide; Sputtering; P-type; Oxide Semiconductor
|
| E-Mail |
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