| 초록 |
Tin oxide has been utilized mostly as transparent electrodes in optoelectronic devices, protective coatings and gas sensors, and also it can be applied to solar cells or oxide thin film transistors (TFT). Since most oxide semiconductors are n-type with large electron mobility, a high purified p-type oxide semiconductor with sufficient hole mobility is necessary for oxide based complementary transistors or diodes. P-type SnO thin film is a good candidate because it can be fabricated at low temperature and exhibit sufficient mobility. In this study, p-type SnO thin films were prepared by low-power RF reactive sputtering of Sn metallic target with Ar/O2 gas mixture. It has been observed that at a lower RF power, tin oxide thin film had improved hole mobility and transmittance. The electrical, structural and optical properties of SnO thin films have been evaluated. |
