| 학회 | 한국재료학회 |
| 학술대회 | 2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 | 20권 1호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Growth behavior of AlN buffer Layer by Reactive RF Magnetron Sputtering on Patterned Sapphire Substrate |
| 초록 | AlN is a material of great technological interest due to its wide band gap, high electrical resistivity, high breakdown voltage, high thermal conductivity and chemical stability. In the field of Lighting Emitting Diode (LED), AlN is used between Gallium nitride (GaN) and Sapphire Substrate for a buffer layer. AlN buffer layer is relieving stresses to reduce the difference between the upper and lower layers of the lattice constant. In this study, preferred c-oriented AlN buffer Layers were deposited by Reactive RF Magnetron Sputtering, of a 99.999% pure aluminum target in an Argon (Ar) and Nitrogen (N2) mixture gas on Patterned c-plane Sapphire Substrate. A series of samples were obtained varying temperature, process pressure and process time. The morphology of these samples were showed by Field Emission Scanning Electron Microscope (FE-SEM), X-ray rocking curves were characterized by θ-2θ X-Ray Diffraction (XRD). Then, GaN was grown on the samples by Metal Organic Chemical Vapor Deposition (MOCVD), were analyzed by High Resolution XRD (HR-XRD) and FE-SEM. Acknowledgement This research is supported by the LG Innotek. |
| 저자 | 강병훈1, 이창민1, 김대식1, 정서주1, 배선호1, 진정근2, 변동진1 |
| 소속 | 1고려대, 2LG 이노텍 |
| 키워드 | RF Sputter; AlN; PSS; GaN; Crystalline; LED; Reactive sputtering |
