| 학회 | 한국재료학회 |
| 학술대회 | 2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 | 22권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | VHF 플라즈마 소스를 이용한 PE-ALD 유전층 증착 공정 및 플라즈마에 의한 데미지 개선 |
| 초록 | The use of plasma reactants may negatively influence electrical properties of high-k films since ion bombardment of energetic radicals can generate defects in films. To reduce the degradation of device property induced by plasma, there have been several attempts such as the pulse of plasma and remotely generated plasma. Instead of 13.56 MHz, radio frequency (RF) plasma which is commonly used for various plasma processes, the plasma density of very high frequency (VHF) plasma is higher than that of RF plasma, and the kinetic energy of ions and/or radicals on the surface in VHF plasma are usually lower than that in RF plasma. Compared to RF plasma, the negative effects of plasma on film properties are less significant in VHF plasma process due to its low ion kinetic energy and high plasma density. Therefore, VHF plasma is expected to be a better plasma reactant for thin film deposition process than RF plasma in the context of higher growth per cycle and lower ion damage. However, there has been no systematic investigation on PE-ALD using VHF plasma reactant so far. RF and VHF PE-ALD films were investigated focusing on their growth characteristic and overall film properties. Instead of conventional RF plasma, the use of VHF plasma enables that the energy transfer from the electric field to the ions and electrons becomes more efficient due to the high plasma density and the low electron temperature. By using VHF as a plasma reactant for PE-ALD Al2O3 films, higher growth per cycle, higher film density, smoother surface, and lower impurity level, are observed, compared to using RF case. Moreover, using VHF plasma achieved a noteworthy result of almost no interlayer formation during ALD process and excellent conformality at 1:40.5 trench structure. Based on lower Dit and thinner the thickness of interlayer, it is believed that VHF plasma induces lower damage to the substrate than RF plasma does. It should be noted that using VHF plasma can be advantageous to improve the overall electrical properties of the dielectric, including film density interlayer thickness, Dit, and leakage currents. |
| 저자 | 오일권1, 김태형2, 염근영2, 김강식3, 이종훈3, 이한보람4, 김형준1 |
| 소속 | 1연세대, 2성균관대, 3UNIST, 4인천대 |
| 키워드 | <P>VHF 플라즈마 소스; PE-ALD; 유전층; 플라즈마 데미지</P> |
