| 학회 | 한국재료학회 |
| 학술대회 | 2019년 가을 (10/30 ~ 11/01, 삼척 쏠비치 호텔&리조트) |
| 권호 | 25권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Study of CdTe Schottky diodes with low leakage current |
| 초록 | Cadmium teluride (CdTe) has been regarded as a promising semiconductor material for x-ray and gamma-ray detectors, operated at room tenmperature because of its features as a high atomic number and large bandgap energy. However, a considerable amount of charge loss in CdTe has limited its capability when we apply this detector to a high resolution spectrometer required in x-ray and gamma-ray detectors. In a semiconductor devices, the magnitude of the electronic noise strongly depends on the leakage current because the low-noise charge-sensitivie amplifier integrates the charge in the crystal and converts it to a voltage pluse. Therefore, the suppression of the leakage current is an important factor in achieving high energy resolution. Commerically available CdTe detectros use high work-function metal such as Au or Pt to form ohmio contact. Much effort has been made to form a high Schottky barrier with metals such as low work-function Al or In, but the lack of stability and relatively poor energy resolution has limited the usefulness of this type of CdTe detector. In this study, the development of high voltage schottky diode structure is reported according to the electrode materials of CdTe singel crystal. |
| 저자 | 안창원1, 황영훈2 |
| 소속 | 1울산대, 2울산과학대 |
| 키워드 | CdTe; Schottky diode; radiation detector |
