| 학회 |
한국고분자학회 |
| 학술대회 |
2016년 봄 (04/06 ~ 04/08, 대전컨벤션센터) |
| 권호 |
41권 1호 |
| 발표분야 |
기능성 고분자 |
| 제목 |
Non-Volatile Ferroelectric Memory with Solution-Processed One-Dimesional Polythiophene Nanofibrils |
| 초록 |
One-dimensional semiconducting polymer has been widely studied for its profound effects on electronic device performance. The assembly of conjugated polymer is facilitated by π-π intermolecular stacking with large anisotropy which accelerates charge transport. One of the representative semiconducting polymers is polythiophene. It is possible to produce the high-quality polythiophene nanowires by simple solution-process. We demonstrated the ferroelectric-gate field effect transistors (Fe-FETs) with solution-processed P3BT, poly(3-butylthiophene) nanofibrils in conjunction with ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) for gate insulating layer. The semiconducting layers composed of long P3BT nanofibrils were prepared various ways. First, we formed the film consisted of random nanofibril network by spin coating. Secondly, the semiconducting channel was patterned by conformal contact transfer with a topologically micropatterned poly(dimethysiloxane) (PDMS) mold. |
| 저자 |
이유정, 송지영, 박찬호, 박철민
|
| 소속 |
연세대 |
| 키워드 |
Nanofibril; FeFET; ferroelectric; memory; P3BT
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| E-Mail |
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