| 초록 |
Controlling the contact resistance of copper (Cu) electrodes is a major issue in improving the performance of thin film transistors (TFT) . Cu has diffusion characteristics in both oxide semiconductor and SiO2, causing degradation of TFT performance. In order to solve these problem, various self-assembled molecular (SAM) layers [such as (3-Aminopropyl) trimethoxysilane (APTMS), (3-Mercaptopropyl) trimethoxysilane (MPTS), etc.] have been studied as solutions. Previous works have shown that the SAM layer effectively act as a Cu diffusion barrier on SiO2 layer, decreasing the leakage current and improving TFT on-off performance. There have been many studies on simply using SAMs as diffusion barriers, however, not much research have been done using SAM as a gate insulator layers. In addition, only the Cu diffusion into the oxide layer was focused, and there was not much discussion on the oxide semiconductor layer. In this presentation, we will suggeste the possibility of SAM layer both as gate insulating layer and as copper diffusion barrier on one oxide semiconductor TFT. We will show that both features of SAM (gate insulating property and Cu diffusion prevention characteristics) can be used simultaneously to further improve the performance of TFTs. SAMs of monoamine and diamine groups were used in this study. TFT characteristics will be shown through capacitance-voltage characteristic and transistor transfer curve measurements. |
