| 초록 |
The remote epitaxy through the 2-dimensional (2D) nanomaterial has offered insight into crystallinity interactions and interfacial properties between materials. However, the systematic investigation on the effects of transition metal dichalcogenides (TMDC) as an interfacial layer has been barely conducted. In this work, we employed monolayer MoS2 as the interfacial material and investigated the remote epitaxial growth behaviors between GaN substrates and ZnO films/rods. It is confirmed the epitaxial properties between ZnO and MoS2 by observing the atomic arrangement of the thin film using Transmission electron microscopy (TEM). In addition, we compared the structural differences of ZnO rods through MoS2 between the Si/SiO2 substrate and GaN substrate. The results show that the weak van der Waals force of monolayer MoS2 cannot completely screen the substrates below 2D materials from the ZnO seed layer, and the relationship between epilayer and substrate can be maintained. |
