| 학회 | 한국고분자학회 |
| 학술대회 | 2003년 가을 (10/10 ~ 10/11, 부경대학교) |
| 권호 | 28권 2호, p.46 |
| 발표분야 | 특별 심포지엄 |
| 제목 | Development of Organic Thin Film Transistor |
| 초록 | Development of Organic Thin Film Transistor There has been great interest recently in the development of displays using various printing methods such as screen-printing, ink-jet printing, and thermal transferring. This trend is driven by the demand for low-cost, large area, flexible and lightweight devices. Organic and polymeric semiconductors are the core materials for constructing thin film transistor (OTFT) and OLEDs, which comprise the basic building blocks for organic flexible displays. For a printable OTFTs, which may find niche applications in low-cost memory devices, such as smart cards and electronic luggage tags, and large area driving circuits for displays. The demonstration of such devices relies heavily on high performance solution-processible organic and polymeric materials along with novel printing processes. The performance of organic TFTs has improved dramatically over the last ten years, and optimized organic TFTs show electrical characteristics similar to those obtained with amorphous silicon devices. TFT devices based on the organic channel materials have been studied, and an examination of their mode of operation showed that their structure is better described by the concept of a thin film transistor (TFT) in which the conduction channel is formed by the injection of a majority carriers in an accumulation layer. The characteristics of such devices are mainly controlled by the interface between semiconducting and insulating layer. In this paper, we have shown that the replacement of the commonly used SiO2 insulating layer by an organic insulator led to a very large improvement of the device characteristics |
| 저자 | 강인남 |
| 소속 | 삼성종합기술원 |
| 키워드 | Organic TFT |
