| 학회 | 한국공업화학회 |
| 학술대회 | 2016년 가을 (10/26 ~ 10/28, 제주국제컨벤션센터(ICCJEJU)) |
| 권호 | 20권 2호 |
| 발표분야 | (나노) 0D 및 1D 나노소재와 그 응용 |
| 제목 | Quantum dot based next generation electronic and optoelectronic devices |
| 초록 | Over the past decade, colloidal quantum dots (QDs) have been extensively studied and great progress has been made on their use in various electronic/optoelectronic applications. In the first part of this talk, we will report on a polyethylenimine ethoxylated (PEIE) modified ZnO nanoparticles (NPs) as electron injection and transport layer for inverted structure red CdSe-ZnS based quantum dot light emitting diode (QDLED). In the second part of this talk, we introduce a new approach to fabricate PbS QD sensitized IGZO hybrid phototransistors for cost-effective NIR detection. The PbS QD can be functionalized directly onto the surface of the IGZO TFT to create a new bi-functional optoelectronic device: a gate-tunable, highly sensitive, and easily integrated NIR-sensing three-terminal phototransistor. |
| 저자 | 황도경 |
| 소속 | 한국과학기술(연) |
| 키워드 | quantum dot; electronic and optoelectronic devices |
