| 초록 |
Resistive random access memory (ReRAM) has a high integration degree of device, low power consumption, and fast operation speed. However, there is a problem of sneak current occurring in the crossbar array structure and reliability due to arbitrary formation of the conductive filament. To solve this problem, self-assembly of block copolymers (BCP) can be used. When the BCP is controlled, a hydrophilic block exists inside and a hydrophobic block exists outside. After the metal compound is penetrated into the micelle thus formed, the metal pattern is combined with the hydrophilic block and patterned to form a structure in which the metal pattern is regularly present inside the insulator layer. This structure is a complementary resistive switch (CRS) structure composed of two antiserial memristive elements, which can block the sneak current and prevent the conductive filament from being randomly formed because the filament is formed above and below the sphere. |
