| 학회 |
한국고분자학회 |
| 학술대회 |
2007년 가을 (10/11 ~ 10/12, 일산킨텍스) |
| 권호 |
32권 2호 |
| 발표분야 |
분자전자 소재 및 소자 기술(분자전자 부문위원회) |
| 제목 |
Organic-Inorganic Hybrid Resists Based on Methoxysilane Cross-Linker for Deep UV Lithography |
| 초록 |
A novel organic-inorganic hybrid polymeric resist containing tirmethoxysilane as a cross-linker, poly(MPMA-co-GBLMA), was successfully synthesized for deep UV lithography that does not need the post-exposure baking step thereby eliminating the post-exposure delay problems. Protons generated from photoacid generators upon UV irradiation initiate the condensation of methoxysilane groups at room temperature resulting organic-insoluble siloxane network in the exposed regions of the resist film, thereby creating negative-tone images. And this material has sufficient silicon content to work as the top imiging layer in a bilayer system. The initial lithographic evaluation of the resist in both single- and bi-layer system showed the potential of the new platform for the next generation resists. |
| 저자 |
박지영, 김진백
|
| 소속 |
한국과학기술원 |
| 키워드 |
silicon; hybrid material; lithography
|
| E-Mail |
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