| 초록 |
Organic field-effect transistors (OFETs) have attracted a great deal of attention during the past decade as they are promising components for low-cost, large-area, and flexible electronics. To make full use of organic circuitry, it is essential to combine p-channel transistors with n-channel transistors for the fabrication of organic complementary circuits which offer lower power dissipation and greater operating speed. Less than five years ago n-channel semiconductors were far less developed compared to p-channel materials. In recent years, however, there has been a remarkable progress in the molecular design, device performance and stability for n-channel OFETs. Herein we report recent progress in materials design and processes for high-performance air-stable n-channel OFETs, mainly focusing on the development of most-commonly used n-channel semiconductors, i.e., perylene diimide (PDI) and naphthalene diimide (NDI) derivatives. |
