| 초록 |
In this paper, polycrystalline CuInSe2 thin film was prepared througha solution deposition technologies. such as CFR.In this study, the highly uniform polycrystalline CuInSe2thin films were synthesized on the glass substrates using a new approach at low temperature processing conditions. In order to investigate material properties , several analytical methods are employed such as uv-vis (band gap) XPS, XRD, AFM. The deposition was performed at various temperatures and as-synthesized CuInSe2materials were annealed at 400°C Nitrogen. The estimated optical band gab is ~1.5eV that is applicable for the fabrication of solar cell device. And the structural information of obtained CuInSe2 thin film by XRD showed representative directions which are. |
