| 학회 | 한국화학공학회 |
| 학술대회 | 2001년 봄 (04/27 ~ 04/28, 연세대학교) |
| 권호 | 7권 1호, p.2178 |
| 발표분야 | 재료 |
| 제목 | Hot filament 법에 의한 diamond 합성에 관한 연구 |
| 초록 | The relationship of diamond film quality to growth rate is a critical issue for the chemical vapor deposition of diamond. Many applications for diamond are not feasible because current process growth diamond too slowly and too poor quality. Addressing and finding solutions to this issue will be critical if diamond is to find wide application in the market place. The growth rate of heteroepitaxial diamond film is depend on the hetero-nucleation of diamond. On silicon substrate the intrinsic diamond nucleation density is only 104 cm-2 and special pretreatments are required to increase this density. Many methods have been researched in order to enhance diamond nucleation such as scratching, biasing, various other pretreatment, etc. In this paper we try to use electric current to treat the substrate’s surface after chemical treatments. The electric current treatment allows us to affirm that the substrate’s surface is very clean and non-reconstructed. The nucleation density on Si (100) pretreated by electric current reached a high value of 1010 cm-2. |
| 저자 | 트란 란안, 김정현, 츄반치엠, 신형식 |
| 소속 | 전북대 |
| 키워드 | HFCVD; diamond; XPS; heteroepitaxial |
| 원문파일 | 초록 보기 |
