| 초록 |
YSZ(Y2O3 stabilized ZrO2) is a well known fluorite structured oxide which exhibitsexcellent oxygen ion conductivity. Therefore, YSZ has been one of the good material choicesfor many important applications requiring high oxygen ion conductivity such as gas sensorsetc. In particular, the solid electrolyte sensor such as YSZ based sensor is one of the mostpromising gas sensors for commercial application because of its high selectivity andsensitivity, ease of operation, fast response, and simple construction. However, studies andapplications of YSZ-like solid electrolyte materials have yet to be conducted intensively interms of various material properties. Thin films of YSZ are of special interest due to its wide applications in microelectronics.Recently, in an effort to enhance the efficiency in applications, YSZ thin films have beenprepared by various methods such as plasma discharge sputtering, RF magnetron sputteringand CVD techniques. However, for the growth of YSZ thin films, not much work has yetdone by the employment of CVD techniques which would allow tenacious and uniform solidstate electrochemical thin films on various substrates. Therefore, this work aimed to studythe growth of YSZ thin films using CVD techniques in connection to the future work ofconstructing an effective electrochemical cell. The preparation methods adopted wereMOCVD(Metal-Organic Chemical Vapor Deposition) and PECVD(Plasma Enhanced MOCVD).
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