화학공학소재연구정보센터
학회 한국재료학회
학술대회 2018년 봄 (05/16 ~ 05/18, 삼척 쏠비치 호텔&리조트)
권호 24권 1호
발표분야 C. 에너지 재료 분과
제목 Fabrication of the Cu2ZnSn(SxSe1-x)4(CZTSSe) thin films based solar cell applications
초록 Cu2ZnSn(S,Se)4 thin film solar cells have been fabrication using sputtered Cu/Sn/Zn mettallic precusor on Mo coated sodalime glass (Mo-SLG) substrate without using a toxic H2Se and H2S atmophere. The As-deposited metallics precursors were sulfo-selenized in graphite box containing S and Se powder using rapid thermal annealing (RTA) furnace. thin film solar cells were fabricated after sulfo-selenization process using a 25nm CdS buffer layer, a 100 nm intrinsic ZnO, a 600 nm Al doped ZnO, and Al/Ni top metal contact. The effect of annealing process pressure and CdS buffer layer thickness on the morphological, structrure and electrical properties have been studied by field emission scanning electron microscopy (FESEM), X-ray diffeaction (XRD), Raman spectroscopy, I-V and quantum efficiency mearsurement system, and time resolved photoluminescence spectroscopy, resprectively. The fabrication Cu2ZnSn(S,Se)4 thin film solar cell show the best conversion efficiency of 11.80 % (Voc: 484.6 mV, Jsc: 37.50 mA/cm2, FF: 64.91%, and active area : 0.3 cm2), which is the highest efficiency.
저자 Myeng Gil Gang, Jin Hyeok Kim
소속 Chonnam National Univ.
키워드 CZTSSe thin film; solar cell; CdS; buffer layer
E-Mail jinhyeok@chonnam.ac.kr