| 학회 |
한국재료학회 |
| 학술대회 |
2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
| 권호 |
22권 1호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
Simulation of phase-change memory cell considering thermoelectric effects |
| 초록 |
Reduction of reset current for low power operation is a key development target in phase-change memory (PCM). Nobody may deny that the histroy of the PCM cell structure is related to lower reset current. Manufacturers always make great efforts to achieve the lower reset current by all means. Recently, cell structure engineering to maximize thermoelectric effects and to finally reduce the reset current started to receive great attention. We present a multiphysics simulation of reset operation of the PCM including the thermoelectric effects and investigate cell structures to lower the reset current. |
| 저자 |
심하연1, 공영민2, 권용우1
|
| 소속 |
1홍익대, 2울산대 |
| 키워드 |
<P>Phase-change memory; reset current reduction; thermoelectric; thermal boundary resistance; cell structure </P>
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| E-Mail |
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