| 초록 |
Intrinsically stretchable materials have gained much interest due to their outstanding stretchability and deformability to be applicated in skin-like electronics. However, to realize skin-like electronics, the stretchable transistor array is inquired but it is hard to achieve not only high integration but also electrical performance. To overcome these issues, herein, we demonstrate a facile method for fabricating ion-gel gated transistor array with azide-based photo-crosslinkers. We could gain high integration through photolithography because crosslinkers have azide-functional groups to behave alkyl-insertion reaction by UV. Also, due to electric double layer effect of ion-gel as insulating layer, the transistors could operate in low voltage conditions (VG < -2). Moreover, the device achieved high average mobility of up to 9.5 (± 0.74) cm2 V-1 s-1 and high on/off ratio (> 106). We believe that our approach will provide a guidance for next-generation stretchable electronics. |
