화학공학소재연구정보센터
학회 한국고분자학회
학술대회 2020년 가을 (10/05 ~ 10/08, 부산컨벤션센터(BEXCO))
권호 45권 1호
발표분야 고분자합성
제목 A low-temperature cross-linked polyimide gate insulator for thin film transistors using a (hydroxymethyl)benzoguanamine as a cross-linker
초록 Synthesized soluble polyimide was further crosslinked with a (hydroxymethyl)benzoguanamine (HMBG) as cross-linking agent at very low temperature (160 oC). Thin film properties of a new low temperature crosslinked polyimide were systematically characterized such as chemical structures, surface properties, thermal stability, and capacitance, etc. A crosslinked DOCDA-6FHAB film showed low leakages current density in metal-insulator-metal devices. The leakage current density and breakdown voltage of a crosslinked DOCDA-6FHAB were found to be less than 9.1x10-10 A/cm2 at 1 MV/cm and above 3 MV/cm. We have fabricated TFT using crosslinked DOCDA-6FHAB with HMBG as a gate dielectric with bottom gate-top contact configuration (channel length L = 100 µm and width W = 1500 µm). TFT showed field effect mobility as 0.205 cm2/Vs and did not show any hysteresis during forward and reverse gate voltage sweep between -30 V and +10 V.
저자 김경민1, 유성미2, 김윤호2, 안택1
소속 1경성대, 2한국화학(연)
키워드 cross-linker; gate dielectric; OTFT
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