| 초록 |
Oxide semiconductor materials have attracted considerable interest over the past decade as ideal candidates for thin film transistors (TFTs), gas sensors, lithium batteries, and solar cells. . In particular, p-type tin(II) monoxide (SnO), is regarded as an importance material in electronics owing to its wide optical band gap energy (2.7~3.0 eV), highlighting the possibility of completely transparent electronic devices. On the other hand, n-type tin(IV) dioxide (SnO2) with a bandgap of ~3.6 eV, excellent optical, electrical, and chemical properties is a derivative of SnO2. SnOx can be selectively deposited by controlling the oxidation state of the Sn precursors. In ALD, various Sn precursor/reactant combinations have been studied to grow SnO or SnO2 films, but very few successes have been recorded for SnO. Herein, we synthesized novel tin(II) complexes as potential precursors for ALD. The resulted complexes were characterized by various analysis equipments. |
