| 초록 |
Boron Nitride thin films were prepared on Si(100) substrate by CVD.Triethylboron and ammonia were employed as precursors and various operatingparameters such as reactor pressure, feed rates were varied to investigate theireffects on deposition rate and film characteristics. Total gas pressure in the reactorwas varied from near atmospheric to near 1 torr. Deposition temperature was in therange 850∼1,050oC. Deposition rate increased with partial pressure of TEB butdecreased with total pressure in reactor. Deposited films were observed by theemployment of SEM, FT-IR, AES, XRD and XPS.
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