| 초록 |
We have developed transparent and stretchable transistor using oxide materials such as Zinc Oxide (ZnO), Indium tin oxide (ITO), and Silicon dioxide (SiO2) film as active layer, electrode, and insulator, respectively. ZnO based thin film transistor (TFT) was fabricated with bottom gate structure and bridge patterns to connect each of devices. We deposited ZnO and ITO using RF magnetron sputtering equipment and Plasma-enhanced chemical vapor deposition (PECVD) was used for SiO2. After whole process, the TFTs were transferred on pre-stretched rubber substrate (up to 5%) using "Transfer Printing Method". As releasing the rubber substrate, the wavy patterns occurred on bridge of ZnO transistor due to shrinkage phenomenon. The wavy patterns provide high flexibility and stretchability, and bridge structure reduces the strain on area of device. We investigated stretchable behavior and also performed the mechanical and electrical properties of device while the TFTs were stretched up to 5%. |
