| 초록 |
Ultrathin and lightweight organic devices are of increasing importance in modern applications such as electronic skin, synthetic textiles, and robotics. Ultrathin devices, however, have the disadvantage of irreversible damage to small physical stresses. In this study, we present ultrathin organic field-effect transistors (OFETs)with substrate that introduced human skin-mimic wrinkles in order to reinforce the lack of strain stability. To obtain the ultrathin device with flexibility, the OFET components including substrate, dielectric, and passivation layers were fabricated by using CVD-processed Parylene-C layers. Dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT), which is a common organic semiconductor material with stable electrical properties, was vacuum-deposited as an active layer. As the results, bottom-gate top-contact OFETs in this system showed the stable operation behaviors with field-effect mobility of ~1.3cm2/Vs and on/off ratio exceeding ~105 up to 5% strain. |
