| 초록 |
Self-assembled monolayers (SAMs) are the representative organic interlayer materials for improving interfacial properties between the metallic/inorganic and organic layers. To confirm the information of the SAM anchoring, usually, the nanoscale morphologies were observed by scanning probe microscopy (SPM) and changes of the surface energies were analyzed by contact angle measurements. In this work, we have introduced interference-gated organic field-effect transistor (IGOFET) to confirm the anchoring reaction of the thiolated SAMs on the Au surface. With processing the thiolated SAM reaction, the threshold voltage in the transfer curve of the IGOFET device was negatively shifted in real-time up to 30 min and then recovered. The results could be explained that the electron movements in the thiolated SAM reaction were actively occurred in the initial reaction stage, inducing the gate voltage modulations and threshold voltage shift in the device. |
