| 초록 |
Organic field-effect transistors require high voltage for operation. Therefore, electrolyte dielectric materials are utilized. However, these materials exhibit undesirable doping effects and power dissipation problems. In this research, we report a method for low-power organic electronic devices using a source-gated transistor (SGT) structure. In SGTs, asymmetric metals with different work functions are used for the source and drain electrodes. SGTs based on organic semiconductors exhibit significantly lower drain voltage (＜10 V) for the saturation regime compared to typical field-effect transistors with the same dielectric layer (＞80 V). In addition, using n-type dopant, the threshold voltage of n-type SGTs is shifted from 51.2 to 0.1 eV and air-stability is improved. Finally, we fabricate flexible SGTs on a Parylene-C substrate which exhibit stable operation under a bending condition. Our results demonstrate a promising technology for low-power, flexible electronic devices. |
