| 학회 |
한국재료학회 |
| 학술대회 |
2011년 가을 (10/27 ~ 10/29, 신라대학교) |
| 권호 |
17권 2호 |
| 발표분야 |
B. Nanomaterials and Processing Technology(나노소재기술) |
| 제목 |
Effects of The tri-sodium citrate concentration on the properties of the Ga-doped ZnO thin film |
| 초록 |
In this study, Ga-doped ZnO (GZO) thin films were prepared on 100 nm-thick ZnO seed glass substrates with different tri-sodium citrate (Na3-citrate) concentrations by hydrothermal technique at 60 °C. ZnO seed layers were deposited by RF magnetron sputtering method at room temperature. Effects of the Na3-citrate concentrations on the structural, electrical, and optical properties of the GZO thin films were investigated. X-ray diffraction studies showed that all of the deposited films were grown into a polycrystalline wurtzite phase with a preferred c-axis and diffraction peaks of {000l} family were only observed without unwanted phase (Ga2O3).The thickness and microstructure of GZO thin films strongly depended on Na3-citrate concentrations. UV-Visible spectroscopy studies showed that the GZO thin films showed a high transmittance with a range from 75 % to 90 % in the visible region and optical band gap increased from 3.28 eV to 3.33 eV with increasing Na3-citrate concentrations. The GZO thin film deposited at 1.6 ×〖10〗^(-3) M of Na3-citrate concentration have the lowest electrical resistivity of 4.65×〖10〗^(-2) Ωcm and the highest carrier concentration of 1.83×〖10〗^19 cm^(-3). |
| 저자 |
Myeng Gil Gang1, Seung Wook Shin2, Jun Hee Han1, Yin Bo Wang3, Jong-Ha Moon1, Jeong Yong Lee3, Jin Hyeok Kim1
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| 소속 |
1Department of Materials Science and Engineering, 2Chonnam National Univ., 3KAIST |
| 키워드 |
Ga doped ZnO (GZO); Hydrothermal; Tri-sodium citrate; Microstructure; Low growth temperature (60 °C)
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| E-Mail |
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