| 학회 |
한국공업화학회 |
| 학술대회 |
2010년 가을 (10/27 ~ 10/29, 대전컨벤션센터) |
| 권호 |
14권 2호 |
| 발표분야 |
정밀화학 |
| 제목 |
Fabrication of Drug-eluting Stent by Deposited N-doped TiO2 Thin Film |
| 초록 |
N-doped TiO2 thin film was deposited onto bare stent by PECVD process using TTIP as a precursor and O2 and N2 gas at 400 ℃.The deposited N-doped TiO2 was modified with Ar/H2O by low temperature plasma. The proper condition was investigated at various discharge power and vapor flow rate.Modified N-doped TiO2 was grafted with Heparin or ALA in acidic condition for 2 hr at 60 ℃. The amounts of grafted Drugsonto stent surfaceare analyzed byUV-spectrometer. Chemical morphology and chemical composition of drug grafted surface was identified by measuring SEM, ESCA, FT-IR/ATR. |
| 저자 |
박유정1, 조명덕2, 박준1, 정경운2, 송선정1, 조동련2, 정명호1
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| 소속 |
1전남대, 2BK 21 |
| 키워드 |
Drug eluting stent; N-doped TiO2
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| E-Mail |
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