| 학회 |
한국고분자학회 |
| 학술대회 |
2016년 봄 (04/06 ~ 04/08, 대전컨벤션센터) |
| 권호 |
41권 1호 |
| 발표분야 |
고분자구조 및 물성 |
| 제목 |
Clues to the Electrical Switching Mechanism of Carbazole-Containing Polyimide Thin Films |
| 초록 |
A series of carbazole-containing polymers (6F-HAB-HABCZn PIs) was synthesized as a model system to investigate the mechanism behind electrical memory behavior in nanoscale thin films. The thermal properties, band gaps, and molecular orbital levels of the PIs, chemical compositions, as well as the nanoscale thin film morphologies and electron densities, were analyzed, providing detailed information on the population and positional distribution of carbazole moieties in thin films of the PIs. The PI thin film layers in the devices exhibited electrically permanent memory behavior, which depended significantly on the population and positional distribution of carbazole moieties in the PI layer and the film thickness. The present results collectively indicate that the electrical switching behavior of the PI films is driven by the carbazole moieties acting as charge traps and a hopping process using the carbazole charge-trap sites as stepping-stones. |
| 저자 |
브라이언 지원 이, 권원상, 김경태, 고용기, 김영용, 이호열, 샹리, 이문호
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| 소속 |
포항공과대 |
| 키워드 |
carbazole-containing polyimide; digital memory device; nonvolatile memory characteristics; memory mechanism;
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| E-Mail |
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