| 학회 |
한국재료학회 |
| 학술대회 |
2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 |
23권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Photoluminescence quenching in single layer MoS2 by ultraviolet-O3 treatment |
| 초록 |
Unlike graphene, the existence of direct bandgaps in transition metal dichalcogenides such as MoS2 offers an attractive possibility of using single layer MoS2 in optoelectronic devices. Because of the absence of dangling bonds in MoS2, surface treatment such as ultraviolet-ozone (UV-O3) treatment is necessary before the deposition of high-k dielectrics on MoS2 to fabricate optoelectronic devices such as phototransistors. However, little interest has been given to the effect of UV-O3 treatment on the optoelectronic properties of single layer MoS2. In this presentation, we systematically investigate the effect of UV-O3 treatment on the photoluminescence of mechanically exfoliated single layer MoS2 flakes. We observe photoluminescence quenching in single layer MoS2 by UV-O3 treatment and explore possible mechanisms. These results demonstrate the significant impact of UV-O3 treatment on the optoelectronic properties of single layer MoS2 suggesting the importance of using optimized process conditions. |
| 저자 |
Hae In Yang1, Sunyeong Park2, Woong Choi3
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| 소속 |
1School of Advanced Materials Engineering, 2Kookmin Univ., 3Seoul |
| 키워드 |
ultraviolet/ozone treatment; single layer MoS<SUB>2</SUB>; photoluminescence quenching
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| E-Mail |
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