| 학회 |
한국화학공학회 |
| 학술대회 |
2013년 가을 (10/23 ~ 10/25, 대구 EXCO) |
| 권호 |
19권 2호, p.1840 |
| 발표분야 |
이동현상 |
| 제목 |
Large scale feature profile simulation for plasma etch process of high aspect ratio contact hole |
| 초록 |
Plasma etching processes of the nanoscale devices still remain great challenge for predictable modeling and simulation to understand anomalous behaviors such as sidewall bowing, and twisting profile. As an effort to address this issue, we have developed a 3D feature profile simulator using level set algorithm with new memory saving technique, which is suitable in the single contact hole etching. However, large scale feature profile simulations are required to predict effects of various mask patterns, and surface charging, leading to huge computational memory and time. In this work, we developed several computational strategies including a compressed algorithm of huge memory and fast searching algorithm by applying run-length encoding algorithm. Furthermore, a parallelized algorithm using GPU will be discussed for large scale computation. Finally, 3D etch profile simulation for 30 contact holes with ultra-high aspect ratios is demonstrated with consideration of realistic plasma surface chemistry. |
| 저자 |
육영근, 유동훈, 장원석, 최광성, 조덕균, 천푸름, 이세아, 임연호
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| 소속 |
전북대 |
| 키워드 |
plasma; 3D simulation; etch process
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| E-Mail |
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| 원문파일 |
초록 보기 |
