| 학회 | 한국재료학회 |
| 학술대회 | 2019년 가을 (10/30 ~ 11/01, 삼척 쏠비치 호텔&리조트) |
| 권호 | 25권 2호 |
| 발표분야 | C. 에너지 재료 분과 |
| 제목 | The Effect of Temperature Ramping Rate on the Performance of Vapor Transport Deposited SnS TFSCs |
| 초록 | As a promising thin-film photovoltaic material, Tin monosulfide (SnS) has been proposed as a potential candidate for the future photovoltaic technology. SnS is an absorber material for thin-film solar cells (TFSCs) consisting of relatively non-toxic and earth- abundant constituents. It has an ideal optical bandgap (~1.3 eV) and high absorption coefficient (＞105 cm-1). Till date, the highest photo-conversion efficiency obtained for the SnS-based TFSCs is limited to 4.8%, which is relatively low compared to its theoretical limit of ~32%. In this study, SnS absorber layer was deposited by using a vapor transport deposition (VTD) method. VTD method has the advantage of enabling high deposition rates, high throughput and scalability which make it important on the industrial level. In addition, the process conditions and the key parameters of VTD such as growth temperature, ramping rate, and growth duration can be easily controlled. Considering these advantages, here, the effect of VTD conditions on SnS absorber, i.e., ramping rate, on the formation of secondary phases, morphology, preferred orientation, and its effect on solar cell performance was investigated. The SnS absorber was deposited by controlling the ramping rate for 15 min, 30 min, 60 min, 90 min, and 120 min, and the final device was fabricated having Al/AZO/i-ZnO/CdS/SnS/Mo structure. The influence of ramping rate on the performance of fabricated SnS TFSCs was investigated using light J-V, dark J-V, and C-V analysis. |
| 저자 | 이효석, 허재영 |
| 소속 | 전남대 |
| 키워드 | Tin monosulfide; Vapor transport deposition; Temperature ramping rate; Absorber layer; Solar cell. |
