| 학회 | 한국재료학회 |
| 학술대회 | 2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 | 26권 1호 |
| 발표분야 | C. 에너지 재료 분과 |
| 제목 | The Effect of Growth Conditions on VTD-SnS Absorber Layer Characteristics for Thin Film Solar Cells |
| 초록 | Orthorhombic tin sulfide (SnS) has recently been emerged as a very promising absorber material for thin-film solar cells (TFSCs). It has an ideal optical band gap (~1.3 eV) and it comprises of relatively earth abundant constituents and non-toxicity. But till date, the highest efficiency obtained from the SnS-based solar cells is 4.36%, which is fairly low compared to its theoretical limit of ~32%. SnS is a non-cubic material unlike CIGS or CdTe, crystallizing in an orthorhombic structure (JCPDS No. 39-0354, a = 4.3291 Å, b = 11.1923 Å, c = 3.9838 Å). It easily leads to the formation of layered features. Therefore, controlling the morphology of the SnS absorber with dense and pinhole-free grains is crucial. In this study, the influence of vapor transport deposition (VTD) conditions of tin sulfide (SnS) , i.e., growth temperature and duration, on the formation of secondary phases, preferred orientation, and solar cell performance, was investigated. In the growth temperature effect experiment, the morphology is grew as plate form with increasing temperature and the secondary phase was found at low temperature. Also, it was confirmed that the film thickness was increased linearly with duration and When the growth duration increases to 10min, a dramatic improvement in the device performance is noted. Finally, fabricated SnS TFSCs (thin film solar cells) achieved near 4% efficiency (VOC ; 0.342 V, JSC ; 19.8 mA cm-2, FF ; 58.0%) at 600 oC growth temperature and 10 minutes duration. In addition, working stability under continuous illumination and damp-heat (85/85) conditions was investigated for the best cell in this study. |
| 저자 | Jae Yu Cho, Jaeyeong Heo |
| 소속 | Chonnam National Univ. |
| 키워드 | Tin sulfide (주석 황화물); Vapor transport deposition (기상 증착법); Thin film solar cells (박막 태양 전지). Absorber layer (흡수층) |
