| 학회 | 한국재료학회 |
| 학술대회 | 2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 | 26권 1호 |
| 발표분야 | C. 에너지 재료 분과 |
| 제목 | Optimization of vapor transport deposited SnS absorber layer for thin film solar cells: effect of working pressure and temperature |
| 초록 | The continuous increase in global energy demand has strongly pointed out the necessity of photovoltaic devices utilizing environmentally friendly, earth-abundant and low-cost materials. In order to meet some of these expectations, tin monosulfide (SnS)-based thin film solar cells (TFSCs) has recently emerged as a promising photovoltaic material considering its suitable optical bandgap (~ 1.3 eV), and high optical absorption coefficient (104 cm-1) in the visible region. However, it is still a great challenge to grow single-phase SnS films, since secondary stoichiometric phases (SnS2 and Sn2S3) are also easily formed during the synthesis process. In this work, SnS films were deposited by vapor transport deposition using SnS source powder in a one-zone horizontal tube furnace. The growth temperature and chamber pressure were varied to obtain single-phase SnS films without any impurities. The structural, optical, and electrical properties of the films have been systematically investigated. The optimal growth temperature and chamber pressure were found to be ~ 600°C and ~ 1.4 Torr, respectively. The photovoltaic properties of SnS-films were studied using device architecture of glass/Mo/SnS/CdS/ZnO/AZO/Ni/Ag. The solar cells fabricated with SnS-films grown under optimized condition displayed highest cell efficiency compared to others. The enhancement in the device performance is primarily attributed to the improved SnS-film morphology and absence of secondary phases. |
| 저자 | Raju Nandi, Jaeyeong Heo |
| 소속 | Chonnam National Univ. |
| 키워드 | Tin sulfide(황화주석); Vapor transport deposition(기상증착법); Absorber(흡수층); Thin-film(박막); Solar cell(태양 전지) |
