| 초록 |
There has been a challenge to overcome the limit of conventional lithography feature size. Therefore, many fancy ideas have been suggested. One of them is using block copolymer which different polymers are linked each other by covalent bond. However, block copolymer itself has many defects and no ordering when any external force is not applied. So, making it less defect and more well-aligned is important issue. Here, we suggest novel method, Soft-graphoepitaxy, to minimize defects and control alignment. We used PS-b-PMMA, and we made this block copolymer alignment induced topological pattern such as line trench and circle trench. Also we applied soft-graphopitaxy controlling the molecular weight of block copolymer and trench size and it worked well. |
