| 학회 | 한국재료학회 |
| 학술대회 | 2013년 가을 (11/06 ~ 11/08, 제주롯데호텔) |
| 권호 | 19권 2호 |
| 발표분야 | B. 나노 재료(Nano Materials) |
| 제목 | Electrical and Optical Properties of Ti-ZnO Films Grown on Glass Substrate by Atomic Layer Deposition |
| 초록 | Zinc-oxide (ZnO), II-VI semiconductor with a wide and direct band gap (Eg: 3.2~3.4 eV), is one of the most potential candidates to substitute for ITO due to its excellent chemical, thermal stability, specific electrical and optoelectronic property. However, the electrical resistivity of un-doped ZnO is not low enough for the practical applications. Therefore, a number of doped ZnO films have been extensively studied for improving the electrical conductivities. In this study, Ti-doped ZnO films were successfully prepared by atomic layer deposition (ALD) techniques. ALD technique was adopted to careful control of Ti doping concentration in ZnO films and to show its feasible application for 3D nanostructured TCO layers. Here, the structural, optical and electrical properties of the Ti-doped ZnO depending on the Ti doping concentration were systemically presented. Also, we presented 3D nanostructured Ti-doped ZnO layer by combining ALD and nanotemplate processes. |
| 저자 | Zhixin Wan1, Woo-Jae Lee2, Seung-Il Jang3, Won-Sub Kwack4, Jin-Hyock Kim1, Jung-Dae Kwon2, Se-Hun Kwon3 |
| 소속 | 1National Core Research Center for Hybrid Materials Solutions, 2Pusan National Univ., 3Busan 609-735, 4Korea |
| 키워드 | Transparent conductive oxide; Ti-doped ZnO films; atomic layer deposition |
