| 학회 | 한국재료학회 |
| 학술대회 | 2014년 가을 (11/27 ~ 11/28, 대전컨벤션센터) |
| 권호 | 20권 2호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Effect of the Selective Ion-implantation for the GaN Growth on Patterned Sapphire Substrate |
| 초록 | Patterned sapphire substrates (PSS) with various shape such as cone-shape, pillar or parallelogram are used as a means of improving luminous efficiency of Gallium nitride based LED. The use of the PSS has result in increased external luminous efficiency by a scattering effect or by a diffraction effect/photonic crystal effect. The growth of high-quality GaN on the PSS is very important for increasing the external extraction efficiency of the LED. However, to grow the GaN on PSS has difficult problems such as lots of misfits and threading dislocations due to the large lattice mismatch and the thermal expansion coefficient difference between GaN and PSS. The growth of different direction poly-grains on top of the pattern not only hinder the epitaxial growth of GaN but also generate lots of defects. Here we introduce a new approach to growth of GaN on PSS by using selective ion-implantation at the top of the pattern. The selective ion-implantation makes the pattern surface of the substrate get damages in the physical and chemical changes. This damages hinder the growth of nuclei on the pattern surface and lead to the epitaxial lateral overgrowth of GaN by selective area growth (SAG). The selective ion-implantation process is an effective pre-treatment to grow the high-quality GaN on the PSS. Acknowledgement This work is supported by the LG Innotek through a project “Pre-treatment on sapphire substrate for low defect and high crystallinity of GaN epilayer” and Korea University Grant. The authors would like to thank Dr. Hyngduk Koh of KIST and Dr. Jae-Sang Lee of KMAC who helped this project. |
| 저자 | 김대식1, 배선호1, 정서주1, 정우섭1, 진정근2, 고형덕3, 이재상4, 변동진1 |
| 소속 | 1고려대, 2LG 이노텍(주) Chip 개발담당 선행개발팀, 3한국과학기술(연), 4한국원자력(연) |
| 키워드 | Ion-implantation; GaN; PSS; SAG; ELOG |
