| 초록 |
Resistive random access memory (RRAM) has been developed as a promising non-volatile memory on plastic substrates for flexible electronic systems owing to its advantage of simple structure and low temperature process. Memory plays an important role in electronic systems for data processing, information storage, and communication, thus flexible memory is an indispensable element to implement flexible electronics. However, cell-to-cell interference existed in memory array leads to not only undesired power consumption but also a misreading problem. This study presents the development of a fully functional flexible one diode-one resistor RRAM device. By integrating high-performance silicon diodes with plasma-oxidized resistive memory, cell-to-cell interference between adjacent memory cells is effectively prevented. The work presented here could provide a useful methodology to realize the flexible non-volatile memory with high packing density for flexible electronic applications. |
