| 학회 | 한국재료학회 |
| 학술대회 | 2012년 가을 (11/07 ~ 11/09, 라카이샌드파인 리조트) |
| 권호 | 18권 2호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Numerical Analysis of Heat Transport and Fluid Flows by Heater Power in Kyropoulos 6 inch Single Crystal Sapphire Growth |
| 초록 | Recently, sapphire crystal growth technologies have obtained a new drive of development due to LED market requiring more wafers for chips. The Kyropoulos method is one of the most stable processes in the industry for growing low cost and high quality single crystal sapphires. In this work, we performed a numerical procedure for simulating the heat transport, fluid flow and the interface deflection depending on the ratio of heater power. The melt convection, temperature distribution, melt/crystal interface shape and stress distributions were calculated as 6-inch sapphire single crystal. Two heaters were considered by applying different power ratio between side heater (SHT) and bottom heater (BHT). The power ratio of SHT and BHT were varied from 1:0 to 1:1. We derived a trend of temperature in the melt and stress distribution by numerical simulation. It was found that the re-melting zone, reducing crystal quality by secondary vortex, is influenced by the power of side heater. Thus, it is clear that the ratio of heater power as well as total power is one of the main keys in the sapphire single crystal growth. Also, it is essential to adjust proper input power for high quality sapphire crystal. *This work was supported by the Components & Materials Technology Development Program (201110038928) funded by the Ministry of Knowledge Economy(MKE) and Brain Korea 21 Project in 2012. |
| 저자 | Il-Hwan Kim1, In-Ji Lee2, Gon-Sub Lee1, Jea-Gun Park2 |
| 소속 | 1Advanced Semiconductor Materials and Device Development Center, 2Hanyang Univ. |
| 키워드 | Sapphire; Kyropoulos; Simulation; Heater power |
