| 학회 | 한국화학공학회 |
| 학술대회 | 2018년 봄 (04/25 ~ 04/27, 창원컨벤션센터) |
| 권호 | 24권 1호, p.759 |
| 발표분야 | 재료 |
| 제목 | The effects of atomic layer deposition parameters on the interface states of TiN/ZrO2 for MIM capacitor applications |
| 초록 | When the ZrO2 is deposited on TiN electrode using the O3 based ALD process, TiN electrode is oxidized by the reactant material (O3), and TiN/ZrO2 interface layer is formed at the surface of TiN electrode. We confirm the TiN/ZrO2 interface layer contains TiO2, TiON, and ZrO2-x by using the angle-resolved X-ray photoelectron spectroscopy (ARXPS). In this study, we investigate the affect of process conditions (substrate temperature, ozone concentration, ozone injection time) on the interface state of TiN/ZrO2 and the electrical properties of MIM capacitor. |
| 저자 | 송홍선, 김도경, 용기중 |
| 소속 | POSTECH |
| 키워드 | 화공소재 전반 |
| 원문파일 | 초록 보기 |
