| 학회 |
한국고분자학회 |
| 학술대회 |
2010년 봄 (04/08 ~ 04/09, 대전컨벤션센터) |
| 권호 |
35권 1호 |
| 발표분야 |
기능성 고분자 |
| 제목 |
Preparation of Fully Aliphatic Polyimides and Porous Thin Films Based on Them |
| 초록 |
It is necessary to develop insulating polymers with low dielectric constants for achievement of high integration and speed in semiconductor. Polyimides have attracted much attention as insulating materials in the microelectronics industry because of their high thermal stability and excellent mechanical properties. In this work, aliphatic polyimides were prepared by two methods; one is commonly used two-step method and the other is a silylation method. Triblock polymers containing various amounts of thermally labile poly(propylene oxide) (PPO) block were prepared. Nanopores were introduced into the aliphatic polyimide by thermolysis of PPO block. Thin films prepared by the two-step method were brittle and pores with diameters of several hundred nanometer were formed, whereas, uniform closed nanpores were obtained by the silylation method. |
| 저자 |
유환철1, Vijay Kumar S1, 최지영2, 조성열3, Kazuaki Kudo1, 정찬문2
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| 소속 |
1연세대, 2Institute of Industrial Science, 3The Univ. of Tokyo |
| 키워드 |
polyimide; low dielectric constant
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| E-Mail |
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