| 초록 |
We attempted to fabricate flexible photovoltaic devices (PVDs) on poly(ethylenenaphthalate) (PEN) substrate using vapor-phase polymerized poly(3,4-ethylenedioxythiophene) (vpp-PEDOT) as an anode, and poly(3,4-ethylene dioxythiophene):poly (styrene sulfonate) (PEDOT:PSS) as a hole-transporting layer. The excellent heat resistance of flexible PEN film substrate offered desirable dimensional stability for the PVD base on poly(3-hexylthiophene) (P3HT)/[6,6]-phenyl-C60-butyric acid methyl ester (PCBM) during annealing process at 150℃ for 10 min. The vpp-PEDOT anode allowed a transmittance of 87 ~ 76 % at 510 nm, and a surface resistance of 80-45 Ω/□. In order to investigate the effect of the bi-layer (PEDOT:PSS/vpp-PEDOT) anode structure on device performance, we measured the short-circuit current density, open-circuit voltage, and fill factor. The PCE of the PVD with the bi-layer anode was 1.25 % under an illumination of AM 1.5 G (100 mW/cm2). |
