| 학회 | 한국재료학회 |
| 학술대회 | 2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 | 22권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Composition Ratio Effect on CdTe Channel Device Synthesized by Solution Process |
| 초록 | Cadmium telluride (CdTe), the most widely used candidate of II-VI compound semiconductor in thin film solar cell materials can be tailored into both n-type and p-type accordingly. The bandgap energy about 1.5eV and high absorption coefficient make it suitable for various applications and has captured interest of many researchers. CdTe has been prepared mostly through vacuum deposition techniques such as metallorganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) and RF magnetron sputtering which associate with higher processing temperature. In this study, the solution process was introduced as it can offers substantial cost reductions where the CdTe was synthesized at a lower processing temperature for thin film transistor (TFT) device. A Te-TOP precursor was used as Te source, while Cd-oleate precursor was used as Cd source and the chemical reaction took place at 300oC in N2 environment. The formed CdTe nanoparticles was purified and spin-coated on a Si/SiO2 substrate as a channel layer for bottom gate TFT device. The different Cd:Te ratio was prepared by manipulating the Te mol ratio in Te source and the performance of each ratio was compared. The microscopic analysis of the channel structure was performed by SEM showed that the CdTe particles size is around 25nm. The crystalline CdTe development was confirmed by XRD analysis. Preliminary electrical data showed a low mobility and Ion/of performance which was a limitation in the solution process. Hall Effect measurement data showed that hole carrier concentration slightly decreases while hall mobility increases with the increasing of Te ratio. However, Te-rich CdTe channel is expected to provide better characteristics of a p-type semiconductor. High pressure annealing step is also introduces to compare the electrical performance and the detail of the results will be presented and discussed further. |
| 저자 | Jaekyeong Jeong1, Azida binti Azmi2 |
| 소속 | 1Hanyang Univ., 2Inha Univ. |
| 키워드 | CdTe; solution process; p-type semiconductor |
